Jogi, T D
(2014)
Alumina Copper Composites for Thermoelectric Applications.
Masters thesis, Indian Institute of Technology Hyderabad.
Abstract
The composite of the Copper (APS 25 μm) and Alumina (APS 20 μm and APS 5 μm) is synthesized using pressureless sintering at 900 0C. The composite with fine alumina particles dispersed in copper matrix has higher resistivity and Seebeck coefficient as that of coarse alumina dispersed copper matrix composite. Also density achieved for fine and coarse alumina dispersed in copper matrix is 94% and 93% respectively. The sample for PLD deposition is produced of composition Cu+5wt% coarse alumina using pressureless sintering at 1000 0C. After the sintering of PLD sample 95% density is achieved. The Seebeck coefficient of composite suddenly increases at 500 0C which may ascribed to oxidation of copper. The pulsed laser deposition is done at substrate temperature of 200 0C on alumina substrate. The average grain size obtained of the film is 7 μm. There is reduction in the atomic fraction of copper in the film as that of in the target.
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