MEMS Components with Perfectly Protected Edges and Comers in Si{110} Wafers

Pal, Prem and Sato, Kazuo and Hida, H and et al, . (2011) MEMS Components with Perfectly Protected Edges and Comers in Si{110} Wafers. In: IEEE International Symposium on MHS & Micro-Nano G-COE, 6-9 November 2011, Nagoya, Japan..

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Abstract

In this paper, we report a fabrication method for the formation of microelectromechanical systems (MEMS) structures with perfectly protected edges and corners in {110}Si wafers using complementary metal oxide semiconductor (CMOS) compatible tetramethyl-ammonium hydroxide (TMAH) solution. Fabrication method includes two-steps wet etching. The second step of etching is carried out after mask inversion from silicon nitride (Si 3 N 4 ) to silicon dioxide (SiO 2 ) by local oxidation of silicon (LOCOS) followed by nitride etching. Mask design methodology for the various shapes microstructures whose edges aligned along different directions is briefly discussed.

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IITH Creators:	IITH Creators ORCiD Pal, Prem UNSPECIFIED
Item Type:	Conference or Workshop Item (Paper)
Uncontrolled Keywords:	CMOS integrated circuits, crystal microstructure, elemental semiconductors,etching,masks,micromechanical devices, oxidation,silicon
Subjects:	Physics
Divisions:	Department of Physics
Depositing User:	Library Staff
Date Deposited:	27 Jul 2022 07:06
Last Modified:	27 Jul 2022 07:06
URI:	http://raiithold.iith.ac.in/id/eprint/6350
Publisher URL:	https://doi.org/10.1109/MHS.2011.6102158
Related URLs:	Google Scholar

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