Study of Cutting-Edge AFM Modalities and SEM Techniques in Determining Surface Parameters of Si{111} Wafer

Satya Srinivas, Bokka and Swarnalatha, Veerla and Rao, Avvaru Venkata Narasimha and Pal, Prem (2019) Study of Cutting-Edge AFM Modalities and SEM Techniques in Determining Surface Parameters of Si{111} Wafer. In: 19th International Workshop on Physics of Semiconductor Devices, IWPSD, 11-15 December 2017, New Delhi, India.

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Abstract

Etching mechanism and etched surface morphology of Si{111} is totally differs from that of the other orientations. It has slowest etch rate in all kinds of wet anisotropic etchants. Generally, the etched surface morphology of Si{111} much smoother than other orientations and may vary with etching parameters such as etchant type, etching temperature. To extract the accurate information of very smooth surface, characterization technique plays an important role. In this work we present the topographical analysis of etched Si{111} surfaces using SEM and AFM techniques. Etching is performed in different concentrations of tetramethylammo-nium hydroxide (TMAH) at two different temperatures.

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IITH Creators:	IITH Creators ORCiD Pal, Prem UNSPECIFIED
Item Type:	Conference or Workshop Item (Paper)
Subjects:	Physics
Divisions:	Department of Physics
Depositing User:	Team Library
Date Deposited:	23 Apr 2019 05:42
Last Modified:	23 Apr 2019 05:42
URI:	http://raiithold.iith.ac.in/id/eprint/4996
Publisher URL:	http://doi.org/10.1007/978-3-319-97604-4_85
Related URLs:	Google Scholar

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