Room temperature desorption of Self Assembly Monolayer (SAM) passivated Cu for lowering the process temperature Cu-Cu bonding of 3-D ICs

Ghosh, Tamal and Dutta, Asudeb and E, Linga Reddy and Ch, Subrahmanyam and Singh, Shiv Govind (2012) Room temperature desorption of Self Assembly Monolayer (SAM) passivated Cu for lowering the process temperature Cu-Cu bonding of 3-D ICs. In: 2012 International Conference on Emerging Electronics, 15-17 December 2012, Mumbai, India.

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Abstract

Success of 3-D ICs technology depends upon the reduction of Cu-Cu bonding temperature. Contamination and oxidation of Cu surface is major bottleneck of reduce the bonding temperature. In this study we investigated the passivation property of Self Assembly Monolayer (SAM) by using Alkyl thiol (Hexanethiol, six carbon chain, C 6 ) on freshly deposited Copper surface and thereafter desorption of the monolayer using cold Helium plasma. Protection of Copper surface using SAM will minimize the possibility of forming Copper oxide. Cold plasma desorption will help in getting back the clean and pure Copper surface on room temperature. This will provide the platform for low temperature bonding (<;200°C) for 3D IC technology.

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IITH Creators:	IITH Creators ORCiD Dutta, Asudeb UNSPECIFIED Ch, Subrahmanyam https://orcid.org/0000-0002-2643-3854 Singh, Shiv Govind http://orcid.org/0000-0001-7319-879X
Item Type:	Conference or Workshop Item (Paper)
Uncontrolled Keywords:	3-D ICs , Alkyl thiol , Helium plasma , SAM
Subjects:	Electrical Engineering
Divisions:	Department of Electrical Engineering
Depositing User:	Team Library
Date Deposited:	22 Feb 2019 05:07
Last Modified:	22 Feb 2019 05:07
URI:	http://raiithold.iith.ac.in/id/eprint/4830
Publisher URL:	http://doi.org/10.1109/ICEmElec.2012.6636262
Related URLs:	Google Scholar

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