The Application of Level Set Method for Simulation of PECVD/LPCVD Processes

Singh, S S and Li, Y and Xing, Y and Pal, Prem (2014) The Application of Level Set Method for Simulation of PECVD/LPCVD Processes. In: Physics of Semiconductor Devices: 17th International Workshop on the Physics of Semiconductor Devices 2013. Environmental Science and Engineering . Springer International Publishing, pp. 239-242. ISBN 978-3-319-03001-2

Preview

Text ppal_239-242.pdf - Published Version Download (1MB) | Preview

Abstract

In this study we present a Chemical Vapor Deposition (CVD) process simulator based on the sparse field method for solving the level set equations. An accurate and efficient tool for tracking the CVD profile evolution is developed, which includes different physical effects of direct deposition and angle dependent ion-induced deposition as well as re-deposition. The simulation results shows that the deposition profiles agree well with the experiment for different opening sizes and various micro structures. It also provides the evidence that this approach is able to describe the complex topographical evolution for PECVD/LPCVD processes.

[error in script]

IITH Creators:	IITH Creators ORCiD Pal, Prem UNSPECIFIED
Item Type:	Book Section
Uncontrolled Keywords:	CVD,Level set
Subjects:	Physics
Divisions:	Department of Physics
Depositing User:	Team Library
Date Deposited:	11 Apr 2016 05:00
Last Modified:	10 Nov 2017 06:13
URI:	http://raiithold.iith.ac.in/id/eprint/2270
Publisher URL:	https://doi.org/10.1007/978-3-319-03002-9_60
Related URLs:	Google Scholar

Actions (login required)

View Item

Statistics for this ePrint Item