First principle study of bias voltage dependent Schottky barrier height of Pt/MgO interface

Ramesh, M. and Niranjan, Manish K (2020) First principle study of bias voltage dependent Schottky barrier height of Pt/MgO interface. In: 3rd International Conference on Condensed Matter and Applied Physics, ICC 2019, 14 - 15 October 2019, Bikaner.

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Abstract

The Pt/MgO (100) interface electronic properties have been analyzed with first principles density functional theory plus nonequilibrium greenes function (NEGF) framework. We analysed n-type schottky barrier hight (SBH) of metal-insulator (Pt/MgO) interface for various biase voltage using two probe model. The applied bias voltage +0.5 V for left and right electrode of supercell, we found large n-SBH is 3.12 eV due to strong interface dipoles. Similarly, in the case of bias voltage -0.5 V for left and +0.5 V for right electrode the n-SBH is lower by 1.91 V. These large SBH values are useful in electronic applications. © 2020 Author(s).

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IITH Creators:	IITH Creators ORCiD Niranjan, Manish K https://orcid.org/0000-0002-4417-5107
Item Type:	Conference or Workshop Item (Paper)
Uncontrolled Keywords:	bias voltage,Schottky barrier,Pt/MgO interface
Subjects:	Physics
Divisions:	Department of Physics
Depositing User:	. LibTrainee 2021
Date Deposited:	23 Nov 2022 13:00
Last Modified:	23 Nov 2022 13:00
URI:	http://raiithold.iith.ac.in/id/eprint/11169
Publisher URL:	https://doi.org/10.1063/5.0001437
OA policy:	https://v2.sherpa.ac.uk/id/publication/28395
Related URLs:	Author Google Scholar

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