Mohanty, Himadri Nandan and Mishra, S.
(2022)
Evidence for negative differential resistance and switchable diode effect in multiferroic BiFe0.95Sc0.05O3-based resistive random access memory under doping engineering.
Journal of Materials Science: Materials in Electronics, 33 (19).
pp. 15848-15857.
ISSN 0957-4522
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Abstract
This report explores the influence of scandium (Sc) doping on structural, optical, and resistive switching properties of multiferroic BiFe0.95Sc0.05O3 (BFS5O) thin-film. The as-grown spin-coated film exhibits unchanged crystal structure, i.e., rhombohedral, along with the appearance of a minor residual phase, confirms X-ray diffraction. Doping engineering distorts the FeO6 octahedron due to the tuning of lattice parameters manifest from the shifting of Raman phonon modes. The fabricated Au/BFS5O/FTO-resistive random access memory (RRAM) exhibits distinct bipolar resistive switching at a SET voltage (+1.75 V) and RESET voltage (-0.8 V) with significant endurance (ON/OFF ratio ∼ 84) and retention over 100 multiple testing cycles. Doping induces a signature of negative differential resistance effect during the SET process. While achieving the LRS, the conduction process follows the well-known Ohmic and trap-controlled space charge-limited conduction mechanism. However, the HRS is completely dominated by Schottky barrier emission. It can be believed that the oxygen vacancies of BFS5O film under the electro-migration effect construct a metallic filament bridge responsible for achieving various resistive states under external voltage bias. The formation of Schottky contact near the Au/BFS5O interface indicates the device possibly achieves switchable diode effects. © 2022, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.
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