Superior Work Function Variability Performance of Horizontally Stacked Nanosheet FETs for Sub-7-nm Technology and Beyond

Sudarsanan, Akhil and Venkateswarlu, Sankatali and Nayak, Kaushik (2020) Superior Work Function Variability Performance of Horizontally Stacked Nanosheet FETs for Sub-7-nm Technology and Beyond. In: 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings, 6 - 21 April 2020, Penang.

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Abstract

In this paper, work function variability (WFV) of stacked nanosheet FET (NSHFET) has been numerically investigated using 3-D quantum corrected Drift-Diffusion simulation framework for sub-7nm high performance logic applications. The WFV induced NSHFET performance is investigated using RGG (ratio of average grain size to gate area) plot for fair comparison against nanowire FET (NWFET) as the effective grain size (Gsize.eff) is smaller than actual grain size (Gsize). From RGG plot analyis, it is found that NSHFET shows better immunity towards WFV induced VT variation by 15% compared to NWFET. The VT variation due to WFV is decreased by 40.47% and 29.16% for 3-stacked NSHFET and NWFET respectively compared to single stack devices. NSHFET exhibits lesser WFV induced OFF-current (IOFF) variation by 57.46% compared to NWFET. NSHFET shows better WFV induced threshold voltage mismatch index (AVT=0.7mV.μ m) compared to NWFET (AVT=1.2mV.μ m).

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IITH Creators:

IITH Creators	ORCiD
Nayak, Kaushik	UNSPECIFIED

Item Type:

Conference or Workshop Item (Paper)

Additional Information:

ACKNOWLEDGMENT The authors would like to thank Electron Devices Research (EDR) group of Electrical Engineering Department of IIT Hyderabad for their valuable discussions and suggestions towards the research work. This research work has been supported by Visvesvaraya Ph.D Scheme for Electronics and IT, Media Lab Asia, under Ministry of Electronics & Information Technology, Government of India, grant no. EE/2015-16/023/MLB/MZAK/0176.

Uncontrolled Keywords:

Average grain size; Drift-diffusion simulation; Effective grain size; Grain size; High-performance logic applications; Nanowire FET; Off current; Vt variation

Subjects:

Electrical Engineering

Divisions:

Department of Electrical Engineering

Depositing User:

. LibTrainee 2021

Date Deposited:

23 Sep 2021 09:23

Last Modified:

21 Nov 2022 07:12

URI:

http://raiithold.iith.ac.in/id/eprint/8844