Items where Division is "Department of Physics" and Year is 2011

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Number of items: 16.

Article

Asthana, Saket (2011) Effect of cobalt substitution on magnetic and transport properties of Nd0·5Sr0·5Mn1−x Co x O3 (x = 0·1, 0·3 and 0·5). Bulletin of Materials Science, 34 (2). pp. 279-282. ISSN 0250-4707

Dighe, A and Giri, Anjan Kumar and Dutta, R and Gaur, N and Gershon, T and Keum, Y-Y and Kodrani, B and Mahajan, N and Matias, J and Mawlong, B and Misra, B and Mohanta, R and Mohanty, G and Vempati, S (2011) B Physics: WHEPP-XI working group report. Pramana, 76 (5). pp. 729-739. ISSN 0304-4289

Gosalvez, M A and Pal, Prem and Ferrando, N and Hida, H and Sato, K (2011) Experimental procurement of the complete 3D etch rate distribution of Si in anisotropic etchants based on vertically micromachined wagon wheel samples. Journal of Micromechanics and Microengineering, 21 (12). pp. 1-14. ISSN 0960-1317

Gosalvez, M A and Pal, Prem and Ferrando, N and Sato, K (2011) Reliability assessment of the complete 3D etch rate distribution of Si in anisotropic etchants based on vertically micromachined wagon wheel samples. Journal of Micromechanics and Microengineering, 21 (12). ISSN 0960-1317

Goslvez, M A and Ferrando, N and Xing, Y and Pal, Prem and Sato, K and Cerda, J and Gadea, R (2011) Simulating anisotropic etching of silicon in any etchant: Evolutionary algorithm for the calibration of the continuous cellular automaton. Journal of Micromechanics and Microengineering, 21 (6). ISSN 0960-1317

Goslvez, M A and Pal, Prem and Sato, K (2011) Reconstructing the 3D etch rate distribution of silicon in anisotropic etchants using data from vicinal {100}, {110} and {111} surfaces. Journal of Micromechanics and Microengineering, 21 (10). ISSN 0960-1317

Mohanta, R and John, D (2011) Probing CP violation in the neutrino sector with magic baseline experiments. Modern Physics Letters A, 26 (3). pp. 205-213. ISSN 0217-7323

Nagar, A and Valleriani, A and Lipowsky, R (2011) Translation by Ribosomes with mRNA Degradation: Exclusion Processes on Aging Tracks. Journal of Statistical Physics, 145 (5). pp. 1385-1404. ISSN 0022-4715

Pal, Prem and Sato, K and Gosalvez, M A and Tang, B and Hida, H and Shikida, M (2011) Fabrication of novel microstructures based on orientation-dependent adsorption of surfactant molecules in a TMAH solution. Journal of Micromechanics and Microengineering, 21 (1). ISSN 0960-1317

Ram, S and Chauhan, M R and Agarwal, K and V, Kanchana (2011) Ab initio study of Heusler alloys Co2XY (X = Cr, Mn, Fe; Y = Al, Ga) under high pressure. Philosophical Magazine Letters, 91 (8). pp. 545-556. ISSN 0950-0839

S, Suryakumar and Karunakaran, K P and Bernard, A and Chandrasekhar, U and Raghavender, N and Sharma, D (2011) Weld bead modeling and process optimization in Hybrid Layered Manufacturing. Computer-Aided Design, 43 (4). pp. 331-344. ISSN 0010-4485

V, Kanchana and G, Vaitheeswaran and Zhang, X and Ma, Y and Svane, A and Eriksson, O (2011) Lattice dynamics and elastic properties of the 4f electron system: CeN. Physical Review B, 84 (20). pp. 1-7. ISSN 1098-0121

Vaitheeswaran, G and V, Kanchana and Svane, A and Christensen, N E and Olsen, J S and Jorgensen, J E (2011) High-pressure structural study of yttrium monochalcogenides from experiment and theory. Physical Review B, 83 (18). pp. 1-8. ISSN 1098-0121

Waskowska, A and Gerward, L and Olsen, J S and K, Ramesh Babu and Vaitheeswaran, G and V, Kanchana and Svane, A and Filipov, V B and Levchenko, G and Lyaschenko, A (2011) Thermoelastic properties of ScB2, TiB2, YB4 and HoB4: Experimental and theoretical studies. Acta Materialia, 59 (12). pp. 4886-4864. ISSN 1359-6454

Yedukondalu, N and Babu, K R and Bheemalingam, C and Singh, D J and Vaitheeswaran, G and V, Kanchana (2011) Electronic structure, optical properties, and bonding in alkaline-earth halofluoride scintillators: BaClF, BaBrF, and BaIF. Physical Review B, 83 (16). pp. 1-7. ISSN 1098-0121

Conference or Workshop Item

Pal, Prem and Sato, Kazuo and Hida, H and et al, . (2011) MEMS Components with Perfectly Protected Edges and Comers in Si{110} Wafers. In: IEEE International Symposium on MHS & Micro-Nano G-COE, 6-9 November 2011, Nagoya, Japan..

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