Multilevel resistive switching in graphene oxide-multiferroic thin-film-based bilayer RRAM device by interfacial oxygen vacancy engineering

Jena, Anjan Kumar and Sahu, Mousam Charan and Mohanty, Jyoti Ranjan and et al, . (2022) Multilevel resistive switching in graphene oxide-multiferroic thin-film-based bilayer RRAM device by interfacial oxygen vacancy engineering. Applied Physics A, 128 (3). ISSN 0947-8396

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Abstract

This work demonstrates the graphene oxide (GO) RRAM exhibiting low-power, low-voltage multilevel resistive switching when clamped to an oxygen vacancy rich bismuth ferrite (BFO) thin film. The GO/BFO structure also shows stable endurance characteristics with a larger memory window due to the accumulation of excess oxygen vacancies. The conduction process in pristine GO does not suffer larger distortion when it is stacked to BFO and follows Ohmic and trap-assisted space charge limited current conduction mechanism. In GO RRAM, Ag+ ion-induced conducting filament is primarily responsible for the switching process, while oxygen vacancies are dominating in bilayer device. The GO/BFO exhibits intermediate resistive states during the RESET process due to multiple breakdowns of conducting paths. At least a 4-bit multistate data storage configuration is demonstrated by tuning the pulse-amplitude of RESET from 2 to 5 V at a constant SET voltage of − 3 V. Thereafter, a 3-bit multilevel storage device can be configured in GO/BFO by tuning the pulse-width from 10 to 30 µs, which takes place at lower time scale than the BFO. Our findings suggest the possibility of ultrafast, multilevel RRAM for next-generation high-density memories and neuromorphic computing applications. © 2022, The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature.

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IITH Creators:

IITH Creators	ORCiD
Mohanty, Jyoti Ranjan	https://orcid.org/0000-0001-9579-754X

Item Type:

Article

Additional Information:

We acknowledge Shikha Varma for extending the Raman facility and S. Choudhury for assistance during the Raman experiment. Thin-film deposition and device fabrication information, statistical analysis for GO based devices, SCLC-Ohmic transition during positive sweeping voltage, BRS behavior of Au/GO/BFO/FTO device, and pulse-width modulated multilevel RRAM (at 10 mA).

Uncontrolled Keywords:

Bi-layer; Interfacial oxygen; Low power Low voltages; Multiferroic thin films; Multiferroics; Multilevel resistive switching; Pulse amplitude; Pulsewidths; Pulswidths; Vacancy engineering

Subjects:

Others > Applied sciences
Physics
Physics > Magnetism

Divisions:

Department of Physics

Depositing User:

. LibTrainee 2021

Date Deposited:

20 Jul 2022 12:11

Last Modified:

20 Jul 2022 12:11

URI:

http://raiithold.iith.ac.in/id/eprint/9596