Boron doped SiC thin film on Silicon synthesized from polycarbosilane: a new lead free material for applications in piezosensors

Kundu, K. and Singh, S.G. and et al, . (2021) Boron doped SiC thin film on Silicon synthesized from polycarbosilane: a new lead free material for applications in piezosensors. Journal of Materials Science: Materials in Electronics, 32 (20). pp. 25108-25117. ISSN 09574522

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Abstract

In this paper, we are reporting for the first time, the piezosensing characterisations of the SiC thin film on silicon, synthesized from boron containing Liquid Polycarbosilane (PCS) as a precursor deposited by Modified Chemical Vapour Deposition (MoCVD) technique followed by the structural characterisation of the film. Comparison was done on the result of the both undoped and doped SiC thin film to highlight the effect of boron doping on the piezo property of the SiC. Interestingly, it was observed that piezoelectric coefficient (d33) of the boron doped SiC thin film was substantially higher (21.33 pm/V) than the undoped SiC thin film (16.21 pm/V). The enhancement in d33 was analysed considering the polarisation inside the thin film created by boron doping. The result shows a promising boron doped SiC thin film material for the application in high temperature piezo sensors.

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IITH Creators:

IITH Creators	ORCiD
Singh, Shiv Govind	http://orcid.org/0000-0001-7319-879X

Item Type:

Article

Uncontrolled Keywords:

Boron-containing, Chemical vapour deposition, High temperature, Lead-free material, Piezoelectric coefficient, Piezosensors, Polycarbosilanes, SiC thin films

Subjects:

Electrical Engineering

Divisions:

Department of Electrical Engineering

Depositing User:

Mrs Haseena VKKM

Date Deposited:

23 Nov 2021 06:18

Last Modified:

22 Feb 2022 06:26

URI:

http://raiithold.iith.ac.in/id/eprint/8989