Device Electrostatics and High Temperature Operation of Oxygen Terminated Boron Doped Diamond MOS Capacitor and MOSFET

Pullaiah, Yerragudi and Emani, Naresh Kumar and Nayak, Kaushik (2020) Device Electrostatics and High Temperature Operation of Oxygen Terminated Boron Doped Diamond MOS Capacitor and MOSFET. In: 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings, 6 April 2020 - 21 April 2020, Penang.

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Abstract

The oxygen-terminated bulk boron doped diamond MOSFET has been designed and simulated using coupled drift-diffusion transport-poisson solver within the TCAD analysis. The diamond MOS capacitor (MOSC) performance is dictated by accumulation, depletion, and deep depletion regimes of operation. We successfully calibrate the fitting parameters in the physical models such as doping and high-field limited carrier mobility, dopant ionization energies, and energy band gap dependence on temperature with experimental C-V and transfer characteristics. We show that the threshold voltage is sensitive to high temperatures. The device exhibits reasonably good ON to OFF current ratio of 108-104at wide temperature range from 300 K-550 K. We also show that the device exhibits a breakdown voltage of-270 V with the chosen impact ionization coefficients

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IITH Creators:

IITH Creators	ORCiD
Pullaiah, Yerragudi	UNSPECIFIED
Emani, Naresh Kumar	UNSPECIFIED
Nayak, Kaushik	UNSPECIFIED

Item Type:

Conference or Workshop Item (Paper)

Uncontrolled Keywords:

Boron; Diamonds; Dielectric devices; Energy gap; Hall mobility; High temperature operations; Hole mobility; Impact ionization; MOS capacitors; Oxygen; Threshold voltage;Boron doped diamond; Dopant ionization energy; Drift diffusion transport; Fitting parameters; High temperature; Impact ionization coefficients; Transfer characteristics; Wide temperature ranges

Subjects:

Electrical Engineering

Divisions:

Department of Electrical Engineering

Depositing User:

. LibTrainee 2021

Date Deposited:

23 Sep 2021 08:19

Last Modified:

23 Sep 2021 08:19

URI:

http://raiithold.iith.ac.in/id/eprint/8843