Record-High Responsivity and Detectivity of a Flexible Deep-Ultraviolet Photodetector Based on Solid State-Assisted Synthesized hBN Nanosheets

Veeralingam, Sushmitha and Durai, Lignesh and Yadav, Pinki and Badhulika, Sushmee (2021) Record-High Responsivity and Detectivity of a Flexible Deep-Ultraviolet Photodetector Based on Solid State-Assisted Synthesized hBN Nanosheets. ACS Applied Electronic Materials, 3 (3). pp. 1162-1169. ISSN 2637-6113

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Abstract

Till date, all reports on hexagonal boron nitride (hBN)-based deep-ultraviolet (DUV) detectors are on rigid substrates with a moderate photoresponse, which limits their utility in flexible electronics-related applications. Herein, we report two-dimensional (2D) hBN on a copper (Cu)-based flexible DUV detector with very high photoresponsivity and external quantum efficiency (EQE). High-purity 2D hBN nanosheets were synthesized by a one-step solid-state reaction and drop-casted onto Cu(111), making the device fabrication process facile, simple, and low-cost. Detailed structural and chemical characterization studies reveal the formation of few layered, hexagonal phased boron nitride nanosheets. Schottky junction-based metal-semiconductor contact configuration is used to obtain hot-carrier reflections on the metal side (Cu), which leads to enhanced quantum efficiency of the photodetector. The as-fabricated DUV photodetector exhibits a responsivity of 5.022 A/W, a quantum yield of 2945%, and a specific detectivity of 6.1 × 1012 Jones at a power intensity of 9.937 μW/cm2, which are 2-3 orders higher than the values reported for other hBN-based photodetectors. This enhanced performance can be attributed to the UV light-modulated band-band excitation of hBN nanosheets and internal photoemission due to the hBN/Cu Schottky junction. The device shows a fast response speed of 0.2 s and a remarkable stability over 500 cycles of continuous bending. This strategy of using 2D nanosheets/metal provides a scope of fabricating low-cost, high-performance, flexible DUV photodetectors for various optoelectronic devices and security applications.

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IITH Creators:

IITH Creators	ORCiD
Veeralingam, Sushmitha	UNSPECIFIED
Durai, Lignesh	UNSPECIFIED
Badhulika, Sushmee	UNSPECIFIED

Item Type:

Article

Uncontrolled Keywords:

Boron nitride nanosheets; Chemical characterization; External quantum efficiency; Hexagonal boron nitride (h-BN); Internal photoemission; Metal-semiconductor contacts; One-step solid-state reactions; Two Dimensional (2 D)

Subjects:

Electrical Engineering

Divisions:

Department of Electrical Engineering

Depositing User:

. LibTrainee 2021

Date Deposited:

04 Aug 2021 11:03

Last Modified:

04 Aug 2021 11:03

URI:

http://raiithold.iith.ac.in/id/eprint/8663