Dependency of fT and fMAX on Various Device Parameters of AIGaN/GaN HEMT

Paul, Nirupam and Singh, Shiv Govind (2018) Dependency of fT and fMAX on Various Device Parameters of AIGaN/GaN HEMT. In: IEEE Electron Devices Kolkata Conference (EDKCON), 24-25 Nov. 2018, Kolkata, India.

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Abstract

Recent improvements in the understanding and fabrication of GaN have led to its application in high frequency communication and high voltage switching systems. Requirement for operation at even higher frequency and voltages is driving the research currently on design of GaN based devices. In this paper, we present the result of our study of two-dimensional (2-D) High Electron Mobility Transistors (HEMTs) based on GaN/AlGaN/GaN heterostructure using Sentaurus TCAD tools. Exhaustive RF simulations were performed to study the effect of various device parameters such as Gate length, Gate-to-Source spacing, Gate-to-Drain spacing, etc. as well as the effect of various Gate shapes such as T-Gate, Y-Gate, etc., on the high frequency performance of the Transistor. Simulation result shows very promising result with f T and f MAX value of 1691.43 GHz and 2650.84 GHz respectively.

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IITH Creators:

IITH Creators	ORCiD
Singh, Shiv Govind	http://orcid.org/0000-0001-7319-879X

Item Type:

Conference or Workshop Item (Paper)

Uncontrolled Keywords:

GaN , fT , fMAX , High-electron-mobility transistors , III-V , TCAD, Logic gates , Gallium nitride , HEMTs , Aluminum gallium nitride , Wide band gap semiconductors , Doping , Silicon carbide

Subjects:

Electrical Engineering > Process Control
Electrical Engineering > Automation & Control Systems

Divisions:

Department of Electrical Engineering

Depositing User:

Team Library

Date Deposited:

26 May 2021 05:57

Last Modified:

26 May 2021 05:57

URI:

http://raiithold.iith.ac.in/id/eprint/7825