Device Electrostatics and High Temperature Operation of Oxygen Terminated Boron Doped Diamond MOS Capacitor and MOSFET
Pullaiah, Y and Emani, Naresh Kumar and Nayak, Kaushik (2020) Device Electrostatics and High Temperature Operation of Oxygen Terminated Boron Doped Diamond MOS Capacitor and MOSFET. In: 4th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference, 16 – 18 March 2020, Penang, Malaysia.
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Item Type: | Conference or Workshop Item (Paper) | ||||||
Subjects: | Electrical Engineering | ||||||
Divisions: | Department of Electrical Engineering | ||||||
Depositing User: | Team Library | ||||||
Date Deposited: | 24 Dec 2019 09:42 | ||||||
Last Modified: | 24 Dec 2019 09:42 | ||||||
URI: | http://raiithold.iith.ac.in/id/eprint/7248 | ||||||
Publisher URL: | |||||||
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