Simultaneous improvement of piezoelectric and magnetic properties in diamagnetic ion modified BiFeO3 film

Jena, A K and Chelvane, J Arout and Mohanty, Jyoti Ranjan (2019) Simultaneous improvement of piezoelectric and magnetic properties in diamagnetic ion modified BiFeO3 film. Journal of Alloys and Compounds, 805. pp. 1168-1174. ISSN 09258388

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Abstract

MultiferroicBiFeO3(BFO) and Bi0.97Y0.03Fe0.95Sc0.05O3(BYFSO)films were fabricated on FTO coated glass substrate using sol-gel spin-coating technique. YeSc co-doping induces the structural distortion without changing the crystal structure (rhombohedral: R3c) of BFO. The electrical and magnetic properties of co-dopedfilm may tuned due to increase in grain and particles size. The high dielectric constant (εr¼290)and low loss (tand¼0:084) indicates the improved insulating properties in BYFSOfilm. Increase inoxygen vacancy concentration in BYFSOfilm is explained with leakage current density, which followsOhmic-SCLC conduction mechanism. Switching of 1800 domains into non-1800(maximum 710and 1090type) ensures improved ferrolectric and piezoelectric properties in BYFSO film. The magnetic properties enhance significantly with saturation magnetization (Ms), remanent magnetization (Mr) are 9.45emu=cm3,6.154emu=cm3 respectively at coercive (Hc)field of 0.822 kOe. Room temperature multiferroic BYFSO film with improved insulating and magnetic properties may be useful for non-volatile RRAM memory application.

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