Direct growth of Black Phosphorous (p type) on flexible substrate with dual role of 2D ZnO (n type) as effective passivation and enabling highly stable broadband photodetection

Sahatiya, Parikshit and Jones, S Solomon and Mattela, Venkat and Badhulika, Sushmee (2019) Direct growth of Black Phosphorous (p type) on flexible substrate with dual role of 2D ZnO (n type) as effective passivation and enabling highly stable broadband photodetection. ACS Applied Electronic Materials. ISSN 2637-6113

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Abstract

The key issue with fabricating Black phosphorous (BP) based devices, despite its excellent electronic properties, is its instability in air. Thus, most reports on BP focus on passivating it with polymers or dielectric which however degrade its properties. Further, the lack of chemical methods for the direct growth of BP on flexible substrates restricts its use in flexible electronics. Addressing all these issues, this work demonstrates the direct growth of BP on flexible Indium Tin oxide (ITO) coated polyethylene terephthalate (PET) substrate and its encapsulation by 2D ZnO as a broadband photodetector. 2D ZnO which was hydrothermally grown on BP, acts as an ideal passivation material that serves the dual purpose of ensuring long-term stability of upto 68 days by preventing the degradation of BP and also enhancing the functionality of the device by increasing the spectral absorbance of the device from Near Infrared (NIR) towards visible and Ultraviolet (UV). The responsivity values calculated were 104.3 μA/W, 50 μA/W and 192.7 μAW for UV, visible and NIR illumination respectively. The method provides a novel strategy for the growth and passivation of BP on different substrates and opens up new avenues of research which find applications in the fields of sensors and electronic devices etc.

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