Silicon Anisotropic Etching in Ternary Solution Composed of TΜΑΗ+Triton+NH 2 ΟΗ

Swarnalatha, Veerla and Narasimha Rao, A V and Pal, Prem (2017) Silicon Anisotropic Etching in Ternary Solution Composed of TΜΑΗ+Triton+NH 2 ΟΗ. ECS Transactions, 77 (11). pp. 1737-1745. ISSN 1938-6737

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Abstract

Present work reports the anisotropic etching characteristics of silicon in various concentrations of tetramethylammonium hydroxide (TMAH) without and with addition of 10% hydroxylamine (NH2OH) and Triton X-100 ranging from ppb to ppm. The etch rate, undercutting at convex corners, and etched surface morphology are investigated in pure TMAH, TMAH+NH2OH, and different compositions of TMAH+NH2OH+Triton (i.e. ternary solution). High etch rate and undercutting are achieved in NH2OH-added 15 wt% TMAH, while 25 wt% TMAH + 10% NH2OH + 1 ppm Triton provided significantly less corner undercutting with reasonably good etch rate of Si{100}. This work is very useful for engineering applications for the fabrication of microstructures using silicon wet bulk micromachining for MEMS-based devices.

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