Silicon Etching Characteristics in Modified TMAH Solution

Swarnalatha, Veerla and Rao, Avvaru Venkata Narasimha and Pal, Prem (2019) Silicon Etching Characteristics in Modified TMAH Solution. In: 19th International Workshop on Physics of Semiconductor Devices, IWPSD, 11-15 December 2017, New Delhi, India.

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Abstract

In the present work, we have studied the etching characteristics of Si {100} and Si{110} in modified low concentration TMAH solution by adding different concentrations of NH 2 OH. The etch rate of silicon and thermal oxide, and etched surface morphology, which are important parameters to be known in the fabrication of MEMS structures using silicon wet bulk micromachining, have been studied in modified TMAH solution. In addition, the effect of aging time of the etchant solution on the etching characteristics is investigated.

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IITH Creators:	IITH Creators ORCiD Pal, Prem UNSPECIFIED
Item Type:	Conference or Workshop Item (Paper)
Subjects:	Physics
Divisions:	Department of Physics
Depositing User:	Team Library
Date Deposited:	23 Apr 2019 06:00
Last Modified:	23 Apr 2019 06:00
URI:	http://raiithold.iith.ac.in/id/eprint/4998
Publisher URL:	http://doi.org/10.1007/978-3-319-97604-4_121
Related URLs:	Google Scholar

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