Dual Damascene Compatible, Copper Rich Alloy Based Surface Passivation Mechanism for Achieving Cu-Cu Bonding at 150 Degree C for 3D IC Integration

Panigrahi, A K and Ghosh, T and Vanjari, S R K and Singh, Shiv Govind (2017) Dual Damascene Compatible, Copper Rich Alloy Based Surface Passivation Mechanism for Achieving Cu-Cu Bonding at 150 Degree C for 3D IC Integration. In: 67thElectronic Components and Technology Conference (ECTC), 30 May-2 June 2017.

Full text not available from this repository. (Request a copy)

Abstract

n this paper, we demonstrate a low temperature, low pressure wafer level damascene compatible Cu-Cu thermocompression bonding using an optimized ultra-thin Copper-Nickel-Manganese based alloy layer, Manganin as passivation layer. Surface oxidation and roughness are the major bottlenecks in achieving low temperature and low pressure high quality Cu-Cu bonding. Manganin alloy have dual role of protecting Cu surface from oxidation even at higher temperature.

[error in script]

IITH Creators:	IITH Creators ORCiD Singh, Shiv Govind http://orcid.org/0000-0001-7319-879X
Item Type:	Conference or Workshop Item (Paper)
Uncontrolled Keywords:	Cu-Cu thermocompression bonding, Diffusion bonding, Manganin alloy, Ultra-thin passivation, 3D IC Integration
Subjects:	Electrical Engineering
Divisions:	Department of Electrical Engineering
Depositing User:	Team Library
Date Deposited:	08 Aug 2017 10:18
Last Modified:	16 Jan 2019 09:15
URI:	http://raiithold.iith.ac.in/id/eprint/3474
Publisher URL:	https://doi.org/10.1109/ECTC.2017.127
Related URLs:	Google Scholar

Actions (login required)

View Item

Statistics for this ePrint Item