Bandgap opening and observing the effect of different device parameters on characteristics of bilayer graphene field effect transistor

Upputuri, Raja (2016) Bandgap opening and observing the effect of different device parameters on characteristics of bilayer graphene field effect transistor. Masters thesis, Indian Institute of Technology Hyderabad.

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Abstract

Silicon is the most used material in production of transistors in the semiconductor industry. To meet the demands of ever increasing performance and efficiency, the size of MOSFET is shrinking continuously to keep up with pace set by the Moore’s law. However, with this current scaling trend, silicon will soon reach its limitations and fail to achieve requirements set by International Technology Road map for Semiconductors. This necessitates the use of innovative alternatives that can replace silicon. Graphene is an emerging material for the future electronics due to its excellent electronic, mechanical and chemical properties which include mobility of 15000cm2V−1s−1, scalability and saturation velocity (5.5×107cm/s). Graphene’s unique electronic transport properties make it a promising candidate to replace silicon as a channel material for the development of nanoelectronic devices. However, the major drawback of graphene arises from it being a zero bandgap material. As a result, devices made of graphene as a channel material cannot be switched off and they show poor ION/IOFF, thus making it unsuitable for logic applications. In addition, the lack of bandgap in graphene results in poor drain current saturation that does not allow the channel to pinch off. This poor current saturation leads to a negligible voltage gain which limits the use of graphene in analog applications as well.

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