Novel inter layer dielectric and thermal TSV material for enhanced heat mitigation in 3-D IC

Khurram, K and Kumar Panigrahi, A and Bonam, S and Krishan Singh, O and Singh, Shiv Govind (2017) Novel inter layer dielectric and thermal TSV material for enhanced heat mitigation in 3-D IC. In: IEEE International 3D Systems Integration Conference, 3DIC, 8-11 November, 2016, San Francisco; United States.

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Abstract

In this paper, heat transfer in 3D IC system is investigated using practical and novel materials for Inter Layer Dielectric (ILD) and Thermal Through Silicon Vias (TTSV). The currently used SiO2 ILD is amiss for heat mitigation due to its poor thermal conductivity. The unique thermal and electrical properties of Hexagonal Boron Nitride (h-BN) are explored in this work for improved heat mitigation.

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IITH Creators:	IITH Creators ORCiD Singh, Shiv Govind http://orcid.org/0000-0001-7319-879X
Item Type:	Conference or Workshop Item (Paper)
Uncontrolled Keywords:	3D-IC; h-BN; heat mitigation; ILD; liner shell; Thermal TSV
Subjects:	Electrical Engineering
Divisions:	Department of Electrical Engineering
Depositing User:	Team Library
Date Deposited:	26 Jul 2016 04:56
Last Modified:	16 Jan 2019 09:20
URI:	http://raiithold.iith.ac.in/id/eprint/2580
Publisher URL:	https://doi.org/10.1109/3DIC.2016.7970005
Related URLs:	Google Scholar

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