Sreeparvathy, P C and V, Kanchana and G, Vaitheeswaran
(2016)
Thermoelectric properties of zinc based pnictide semiconductors.
Journal of Applied Physics, 119 (085701).
pp. 1-8.
ISSN 0021-8979
Abstract
We report a detailed first principles density functional calculations to understand the electronic
structure and transport properties of Zn-based pnictides ZnXPn
2
(X: Si, Ge, and Sn; Pn: P and As)
and ZnSiSb
2
. The electronic properties calculated using Tran-Blaha modified Becke-Johnson func-
tional reveals the semi-conducting nature, and the resulting band gaps are in good agreement with
experimental and other theoretical reports. We find a mixture of heavy and light bands in the band
structure which is an advantage for good thermoelectric (TE) properties. The calculated transport
properties unveils the favour p-type conduction in ZnXP
2
(X: Si, Ge, and Sn) and n-type conduc-
tion in ZnGeP
2
and ZnSiAs
2
. Comparison of transport properties of Zn-based pnictides with the
prototype chalcopyrite thermoelectric materials implies that the thermopower values of the investi-
gated compounds to be higher when compared with the prototype chalcopyrite thermoelectric
materials, together with the comparable values for electrical conductivity scaled by relaxation time.
In addition to this, Zn-based pnictides are found to possess higher thermopower than well known
traditional TE materials at room temperature and above which motivates further research in these
compounds.
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