Ultra-thin TI passivation mediated breakthrough in High quality CU-CU bonding at low temperature and pressure

Panigrahi, A K and Bonam, S and Ghosh, T and Singh, Shiv Govind and Vanjari, Siva Rama Krishna (2016) Ultra-thin TI passivation mediated breakthrough in High quality CU-CU bonding at low temperature and pressure. Materials Letters, 169. pp. 269-272. ISSN 0167-577X

Full text not available from this repository. (Request a copy)

Abstract

Deposition of Ultra-thin Titanium (Ti) layer (3 nm) on Copper (Cu) surface inhibits surface oxidation upon exposure to ambient air as well as reduces surface roughness from about 2.1 nm (Cu Only) to about 0.4 nm resulting in Cu-Cu bonding at a temperature as low as 160° C and operating pressure as low as 2.5 bar. This simple passivation mechanism enhanced diffusion of Cu across the boundary and resulted in grain growth across the entire bonding layers as revealed by several methodical characterizations. This practical breakthrough has immense potential to usher us into practical realization of 3D IC integration

[error in script]

IITH Creators:	IITH Creators ORCiD Singh, Shiv Govind http://orcid.org/0000-0001-7319-879X Vanjari, Siva Rama Krishna UNSPECIFIED
Item Type:	Article
Uncontrolled Keywords:	Wafer-on-Wafer (WoW); Ti Passivation; 3D IC integration; Ultra-thin Ti
Subjects:	Others > Engineering technology
Divisions:	Department of Electrical Engineering
Depositing User:	Library Staff
Date Deposited:	03 Feb 2016 05:13
Last Modified:	16 Jan 2019 10:30
URI:	http://raiithold.iith.ac.in/id/eprint/2170
Publisher URL:	https://doi.org/10.1016/j.matlet.2016.01.126
OA policy:	http://www.sherpa.ac.uk/romeo/issn/0167-577X/
Related URLs:	Google Scholar

Actions (login required)

View Item

Statistics for this ePrint Item