Ultra-thin TI passivation mediated breakthrough in High quality CU-CU bonding at low temperature and pressure

Panigrahi, A K and Bonam, S and Ghosh, T and Singh, Shiv Govind and Vanjari, Siva Rama Krishna (2016) Ultra-thin TI passivation mediated breakthrough in High quality CU-CU bonding at low temperature and pressure. Materials Letters, 169. pp. 269-272. ISSN 0167-577X

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Abstract

Deposition of Ultra-thin Titanium (Ti) layer (3 nm) on Copper (Cu) surface inhibits surface oxidation upon exposure to ambient air as well as reduces surface roughness from about 2.1 nm (Cu Only) to about 0.4 nm resulting in Cu-Cu bonding at a temperature as low as 160° C and operating pressure as low as 2.5 bar. This simple passivation mechanism enhanced diffusion of Cu across the boundary and resulted in grain growth across the entire bonding layers as revealed by several methodical characterizations. This practical breakthrough has immense potential to usher us into practical realization of 3D IC integration

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IITH Creators:
IITH CreatorsORCiD
Singh, Shiv Govindhttp://orcid.org/0000-0001-7319-879X
Vanjari, Siva Rama KrishnaUNSPECIFIED
Item Type: Article
Uncontrolled Keywords: Wafer-on-Wafer (WoW); Ti Passivation; 3D IC integration; Ultra-thin Ti
Subjects: Others > Engineering technology
Divisions: Department of Electrical Engineering
Depositing User: Library Staff
Date Deposited: 03 Feb 2016 05:13
Last Modified: 16 Jan 2019 10:30
URI: http://raiithold.iith.ac.in/id/eprint/2170
Publisher URL: https://doi.org/10.1016/j.matlet.2016.01.126
OA policy: http://www.sherpa.ac.uk/romeo/issn/0167-577X/
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