Study of Silicon Anodic Oxidation and Wet Anisotropic Etching for MEMS and Surface Texturing

Akarapu, Ashok (2015) Study of Silicon Anodic Oxidation and Wet Anisotropic Etching for MEMS and Surface Texturing. PhD thesis, Indian Institute of Technology Hyderabad.

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Abstract

Silicon dioxide (SiO2) thin films are most widely used insulating films in the manufacture of silicon-based semiconductor devices, integrated circuit (ICs), micro electromechanical systems (MEMS), etc. for different purposes. In MEMS, SiO2 thin films are used as etch mask, structural and sacrificial layers. The distinctive characteristics of SiO2 over other insulating materials are easy synthesis, excellent insulating property, high quality Si-SiO2 interface, high etching selectivity in alkaline solutions, etc. SiO2 thin films can be prepared by several techniques such as thermal oxidation, anodic oxidation, plasma oxidation, chemical vapor deposition (CVD), Sputtering, Solgel, etc.

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IITH Creators:	IITH Creators ORCiD
Item Type:	Thesis (PhD)
Uncontrolled Keywords:	Silicon dioxide, micro-electromechanical systems, integrated circuit, TD471
Subjects:	Physics
Divisions:	Department of Physics
Depositing User:	Library Staff
Date Deposited:	04 Aug 2015 11:02
Last Modified:	14 Aug 2017 10:52
URI:	http://raiithold.iith.ac.in/id/eprint/1777
Publisher URL:
Related URLs:	Google Scholar

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