Temperature Evolution of Charge Transport in Chitosan Based Bio-Resistive Random-Access Memory Device

Jammalamadaka, S Narayana (2023) Temperature Evolution of Charge Transport in Chitosan Based Bio-Resistive Random-Access Memory Device. Physica Status Solidi (a), 220 (9). p. 2300050. ISSN 1862-6300

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Abstract

This study reports on the temperature stability of the Ag/chitosan/fluorine-doped tin oxide (Ag/chitosan/FTO)-based bio-resistive random-access memory (bio-RRAM) device through current–voltage (I–V) characteristics in the temperature range of 280–360 K. From I–V characteristics, it is affirmed that in the present device, the unipolar nature of resistive switching is highly stable and reproducible. The device is quite stable at 360 K. Activation energy is higher in the low resistance state (LRS) (≈0.096 eV) compared with the high resistance state (HRS) (≈0.076 eV) due to sufficient thermal energy to cross the barrier at high temperature. From 280 to 360 K, the conduction mechanism in the HRS of the chitosan device is followed by a direct tunneling mechanism, while the Schottky mechanism is dominated in the LRS. Barrier height calculated from Schottky mechanism in an LRS is found to increase with temperature from 0.50 eV (280 K) to 0.66 eV (360 K). Evidenced current values up to 200 pA obtained with a conducting atomic force microscope infer that conduction in the chitosan-based device is due to filaments formed by oxygen defects. It is believed that the present results are helpful for the development of future bio-RRAM devices.

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IITH Creators:

IITH Creators	ORCiD
Jammalamadaka, S Narayana	https://orcid.org/0000-0001-9235-7012

Item Type:

Article

Uncontrolled Keywords:

barrier height; fluorine-doped tin oxide; RESET; resistive switching; SET; temperature; thermal activation energy; Barrier heights; Fluorine doped-tin oxides; High-resistance state; Low-resistance state; Random access memory; RESET; Resistive switching; Schottky; SET; Thermal activation energies; Chitosan; Activation energy; Nanocomposites; RRAM; Tin oxides

Subjects:

Physics
Physics > Classical mechanics
Physics > Sound, light and Heat

Divisions:

Department of Physics

Depositing User:

Mr Nigam Prasad Bisoyi

Date Deposited:

28 Sep 2023 13:00

Last Modified:

28 Sep 2023 13:00

URI:

http://raiithold.iith.ac.in/id/eprint/11718