Lateral P–N Junction Photodiodes Using Lateral Polarity Structure GaN Films: A Theoretical Perspective

Badami, Oves (2023) Lateral P–N Junction Photodiodes Using Lateral Polarity Structure GaN Films: A Theoretical Perspective. Journal of Electronic Materials, 52 (3). pp. 2148-2157. ISSN 0361-5235

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Abstract

In this work, we propose lateral p–n junction self-powered ultraviolet photodiodes using lateral polarity structure GaN (LPS-GaN) films. The design of the proposed photodiode is inspired by the recent demonstrations of obtaining laterally varying doping profiles by controlling the incorporation of donor and acceptor impurities in LPS-GaN. The proposed photodiodes provide a larger area for light absorption near the surface, and at the same time provide a large photocurrent even at zero external bias voltage, thanks to the electric field distribution of the lateral p–n junction. Through technology computer-aided design simulations and semi-analytical calculations, we show that the proposed photodiodes outperform the traditionally popular metal–semiconductor–metal (MSM) GaN photodiodes. The results shown in this study hold promise for realizing solar-blind photodetectors using polar GaN and AlGaN films.

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IITH Creators:

IITH Creators	ORCiD
Badami, Oves	https://orcid.org/0000-0003-1975-2803

Item Type:

Article

Uncontrolled Keywords:

doping; GaN; laterally varying polarity; photocurrent; UV photodiodes; Photodiodes; Donor and acceptor; Doping profiles; Electric field distributions; GaN film; Impurities in; Laterally varying polarity; P-n junction; Self-powered; Technology computer aided design; UV photodiodes; Aluminum gallium nitride; Computer aided design; Electric fields; Gallium nitride; III-V semiconductors; Light absorption; Photodetectors; Semiconductor alloys; Semiconductor doping; Semiconductor junctions; Structural design; Wide band gap semiconductors

Subjects:

Electrical Engineering
Electrical Engineering > Automation & Control Systems

Divisions:

Department of Electrical Engineering

Depositing User:

Mr Nigam Prasad Bisoyi

Date Deposited:

27 Aug 2023 10:08

Last Modified:

27 Aug 2023 10:08

URI:

http://raiithold.iith.ac.in/id/eprint/11637