Effect of growth and residual stress in AlN (0002) thin films on MEMS accelerometer design

Gupta, Nidhi and Dutta, Shankar and Pandey, Akhilesh and Vanjari, Siva Rama Krishna and et al, . (2020) Effect of growth and residual stress in AlN (0002) thin films on MEMS accelerometer design. Journal of Materials Science: Materials in Electronics, 31 (20). pp. 17281-17290. ISSN 0957-4522

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Abstract

This paper discusses the growth and evolution of residual stresses in (0002) preferentially oriented aluminum nitride (AlN) layers on Si (111) wafers by sputtering technique for the development of micro-electro-mechanical system (MEMS) accelerometer. The microstructure of the deposited films exhibited vertical columnar structures. Residual stresses in the sputtered AlN films are − 1.2 GPa, − 0.8 GPa, and − 0.25 GPa for the film thickness of 600 nm, 750 nm, and 900 nm respectively. The effect of the residual stress on the piezoelectric MEMS acceleration sensor structure is analyzed. The presence of residual stress reduced the resonant frequency (up to 14.72%) and bandwidth (up to 27.3%) of the accelerometer. The locations of the von-Mises stress maxima are shifted from the beam edges (adjoining to the proof-mass) to the whole proof-mass area. The normalized stress sensitivity (which defines the piezoelectric charge sensitivity) is reduced by two orders due to the residual stress in the AlN layers. © 2020, Springer Science+Business Media, LLC, part of Springer Nature.

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IITH Creators:

IITH Creators	ORCiD
Vanjari, Siva Rama Krishna	https://orcid.org/0000-0002-5880-4023

Item Type:

Article

Additional Information:

The authors would like to thank Director SSPL for permission to publish this work. Nidhi Gupta would like to thank the funding agency of the Government of India for providing her assistantship. Help from other colleagues is also acknowledged.

Uncontrolled Keywords:

Acceleration sensors; Aluminum nitride (AlN); Columnar structures; Micro electromechanical system (MEMS); Piezoelectric charge; Piezoelectric MEMS; Sputtering techniques; Stress sensitivity

Subjects:

Electrical Engineering

Divisions:

Department of Electrical Engineering

Depositing User:

. LibTrainee 2021

Date Deposited:

01 Nov 2022 10:31

Last Modified:

01 Nov 2022 10:31

URI:

http://raiithold.iith.ac.in/id/eprint/11121