A Kinetic Monte Carlo Study of Retention Time in a POM Molecule-Based Flash Memory

Badami, Oves and Sadi, Toufik and Adamu-Lema, Fikru and et al, . (2020) A Kinetic Monte Carlo Study of Retention Time in a POM Molecule-Based Flash Memory. IEEE Transactions on Nanotechnology, 19. pp. 704-710. ISSN 1536-125X

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Abstract

The modelling of conventional and novel memory devices has gained significant traction in recent years. This is primarily because the need to store an increasingly larger amount of data demands a better understanding of the working of the novel memory devices, to enable faster development of the future technology generations. Furthermore, in-memory computing is also of great interest from the computational perspectives, to overcome the data transfer bottleneck that is prevalent in the von-Neumann architecture. These important factors necessitate the development of comprehensive TCAD simulation tools that can be used for modeling carrier dynamics in the gate oxides of the flash memory cells. In this work, we introduce the kinetic Monte Carlo module that we have developed and integrated within the Nano Electronic Simulation Software (NESS)-to model electronic charge transport in Flash memory type structures. Using the developed module, we perform retention time analysis for a polyoxometalate (POM) molecule-based charge trap flash memory. Our simulation study highlights that retention characteristics for the POM molecules have a unique feature that depends on the properties of the tunneling oxide. © 2002-2012 IEEE.

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IITH Creators:

IITH Creators	ORCiD
Badami, Oves	UNSPECIFIED

Item Type:

Article

Additional Information:

Manuscript received June 3, 2020; accepted August 3, 2020. Date of publication August 20, 2020; date of current version September 28, 2020. This work was supported in part by the EPSRC (UK) under Grants EP/S000224/1 and EP/S001131/1 and in part by NSFC project (Project No.61604105). The review of this article was arranged by Associate Editor Prof. Ashok Srivastava. (Corresponding author: Jie Ding.) Oves Badami is with the Indian Institute of Technology Hyderabad, San-gareddy 502285, India (e-mail: oves.badami@ee.iith.ac.in).

Uncontrolled Keywords:

flash memory; kinetic Monte Carlo; polyoxometalate; Tunneling

Subjects:

Electrical Engineering

Divisions:

Department of Electrical Engineering

Depositing User:

. LibTrainee 2021

Date Deposited:

22 Oct 2022 06:39

Last Modified:

22 Oct 2022 06:39